Fabrication And Characterization Of Amorphous Si/Al/Ag Multilayers For Optoelectronic Devices

El-Desouky, H.; Hassan, S.; El -Shaer, A; Abo Ghazala, M; Elrasasi, Tarek Y

doi:10.21608/ejchem.2024.323495.10538

Fabrication And Characterization Of Amorphous Si/Al/Ag Multilayers For Optoelectronic Devices

Document Type : Original Article

Authors

¹ Faculty of Science, Menoufia University, Shebin El-Koom, Menoufia, 32511, Egypt

² Faculty of Science, Kafrelshiekh University, Kafr Elshaikh, Egypt.

³ Lecturer of Solid State Physics Benha University

10.21608/ejchem.2024.323495.10538

Abstract

Multilayer thin films of a-Si/Si, a-Si/Ag, and a-Si/Al/Ag were prepared on quartz substrates via thermal evaporation techniques followed by annealing at 500°C for one hour at low vacuum. The thermal, optical, and electrical measurements were investigated using TGA, U-V spectrophotometer, and RLC circuit. The results showed an oxidation occurrence during annealing for all samples. The results of the optical properties, such as the extinction coefficient and refractive index, revealed enhancements attributable to oxidation and the transition is direct to the band gap around 1.5 eV. The electrical properties were assessed by analyzing AC conductivity within the frequency range of 100 Hz to 500 KHz across different temperatures (300 to 370 K)., The results of AC indicate the presence of two conduction mechanisms -hopping and tunneling- dependent on frequency, temperature, and oxidation. Additionally, the I-V characteristic curves of the samples exhibited ohmic behavior, with resistance decreasing under light illumination suggesting potential applications in optoelectronic devices.

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