Functional Groups, Band Gap Energy, and Morphology Properties of Annealed Silicon Dioxide (SiO2)

Document Type : Original Article

Authors

1 Department of Chemistry, Faculty of Mathematics and Natural Science, University of Palangka Raya, Palangka Raya, Kalimantan Tengah, 73111, Indonesia

2 Department of Physics, Faculty of Mathematics and Natural Science, Universitas Palangka Raya, Palangka Raya 73111, Indonesia

3 Department of Physics, Faculty of Mathematics and Natural Sciences, IPB University, Bogor, Indonesia

4 Department of Chemistry, Faculty of Mathematics and Natural Sciences, IPB University, Bogor 16680, Indonesia

Abstract

Annealed silicon dioxide (SiO2) has been prepared by various annealing temperatures at 0 (without treatment, room temperature), 800 °C, 900 °C and 1000 °C denote as S0, S800, S900 and S1000. The properties of the annealed SiO2 were characterized by three methods. The functional groups were identified using FTIR, the band gap energy was determined using UV-Vis DR, and the morphological properties of SiO2 were determined using SEM. FTIR data show that the characteristic functional groups of annealed silicon dioxide are Si-O-Si, Si-Si, -OH, H-Si-Si-H (monohydride), dan Si-OH. The band gap energy values for annealed SiO2 at S0, S800, S900 and S1000 were 2.27; 2.27; 2.26; 2.22 eV. The morphology of silicon dioxide shows that silicon dioxide has irregular shape and size, it has sharp angles accompanied by small flakes on the surface, the particle size is estimated to be around 3-10 μm.
Keywords: annealed silicon dioxide (SiO2); functional group; band gap energy; morphology.

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